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Title: Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information]

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe2 to graphene.
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [4] ;  [5] ;  [5] ;  [4] ; ;  [4] ;  [6] ;  [5] ;  [3] ;  [3] ;  [2] ;  [1]
  1. Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials
  2. Inst. of Atomic and Molecular Sciences, Tapei (Taiwan)
  3. Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering
  4. Univ. of Texas at Dallas, Richardson, TX (United States). Dept. of Materials Science and Engineering
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  6. Naval Research Lab. (NRL), Washington, DC (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1530-6984; 536647
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 14; Journal Issue: 12; Journal ID: ISSN 1530-6984
American Chemical Society
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States