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Title: Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation.

Abstract not provided.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1183076
Report Number(s):
SAND2014-16651J
Journal ID: ISSN 0003--6951; 534549
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 13
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English