Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

Title: Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Patent · Tue May 26 00:00:00 EDT 2015

OSTI ID:1182570

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 9,041,027

Application Number:: 13/990,756

OSTI ID:: 1182570

Country of Publication:: United States

Language:: English

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