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Title: Anisotropic giant magnetoresistance in NbSb₂

We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10⁵% in 2 K and 9 T field, and 4.3 × 10⁶% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb₂. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.
 [1] ;  [2] ;  [1] ;  [1] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Florida State Univ., Tallahassee, FL (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2045-2322; R&D Project: PM016; KC0201050
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; magnetic properties and materials; electronic properties and materials