Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB 2 thin films

Tan, Teng; Wolak, M. A.; Acharya, Narendra; Krick, Alex; Lang, Andrew C.; Sloppy, Jennifer; Taheri, Mitra L.; Civale, L.; Chen, Ke; Xi, X. X.

doi:10.1063/1.4916696

Title: Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB ₂ thin films

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · APL Materials

DOI:https://doi.org/10.1063/1.4916696· OSTI ID:1179641

; Wolak, M. A.; Acharya, Narendra; Krick, Alex; Lang, Andrew C.; Sloppy, Jennifer; Taheri, Mitra L.; Civale, L.;

; Xi, X. X.

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetration field.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0011616

OSTI ID:: 1179641

Alternate ID(s):: OSTI ID: 1200906; OSTI ID: 1421210

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 3 Journal Issue: 4; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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