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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1179234
Report Number(s):
9,028,612
13/173,213
DOE Contract Number:
FC26-08NT01578
Resource Type:
Patent
Research Org:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY