Field-effect P-N junction

Regan, William; Zettl, Alexander

Title: Field-effect P-N junction

Patent · Tue May 05 00:00:00 EDT 2015

OSTI ID:1179021

Regan, William; Zettl, Alexander

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-05CH11231

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 9,024,367

Application Number:: 13/773,985

OSTI ID:: 1179021

Resource Relation:: Patent File Date: 2013 Feb 22

Country of Publication:: United States

Language:: English

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