skip to main content

Title: Method of preparing nitrogen containing semiconductor material

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
Authors:
;
Publication Date:
OSTI Identifier:
1175017
Report Number(s):
6,787,385
10/344,380
DOE Contract Number:
AC36-99GO10337
Resource Type:
Patent
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY