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Title: Density-functional-theory study of the Ga split-interstitial in GaAs

Abstract

Density-functional theory (DFT) was used to study the C2v 110g Ga interstitial in GaAs (see inset).

Authors:
 [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1171558
Report Number(s):
SAND2014-17103R
537063
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wright, Alan F. Density-functional-theory study of the Ga split-interstitial in GaAs. United States: N. p., 2014. Web. doi:10.2172/1171558.
Wright, Alan F. Density-functional-theory study of the Ga split-interstitial in GaAs. United States. https://doi.org/10.2172/1171558
Wright, Alan F. 2014. "Density-functional-theory study of the Ga split-interstitial in GaAs". United States. https://doi.org/10.2172/1171558. https://www.osti.gov/servlets/purl/1171558.
@article{osti_1171558,
title = {Density-functional-theory study of the Ga split-interstitial in GaAs},
author = {Wright, Alan F.},
abstractNote = {Density-functional theory (DFT) was used to study the C2v 110g Ga interstitial in GaAs (see inset).},
doi = {10.2172/1171558},
url = {https://www.osti.gov/biblio/1171558}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 01 00:00:00 EDT 2014},
month = {Fri Aug 01 00:00:00 EDT 2014}
}