skip to main content

Title: Density-functional-theory study of the Ga split-interstitial in GaAs

Density-functional theory (DFT) was used to study the C2v 110g Ga interstitial in GaAs (see inset).
Authors:
 [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1171558
Report Number(s):
SAND2014--17103R
537063
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE