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Title: Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy

Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC(0001) to four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5×1013(0.0034), 7.8×1013(0.018), 1.5×1014(0.034), and 7.8×1014(0.18) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C) and Raman spectroscopy. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. Raman Spectroscopy was performed using a green laser of wavelength 532 nm as excitation source. The normalized Raman Intensity, In shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.017, 0.034 and 0.178 respectively. In this paper, the characterizations of the defects produced due to the Nitrogen implantation in 4H-SiC are presented and the results are discussed.
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OSTI Identifier:
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Resource Type:
Journal Article
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 332:28-32
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
n-type 4H-SiC, Ion implantation, RBS, Channeling, Raman Spectroscopy; Environmental Molecular Sciences Laboratory