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Title: A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report

The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.
Authors:
 [1] ;  [1]
  1. The Ohio State Univ., Columbus, OH (United States)
Publication Date:
OSTI Identifier:
1169925
Report Number(s):
DOE/NEUP--11-3004
11-3004; TRN: US1500398
DOE Contract Number:
AC07-05ID14517
Resource Type:
Technical Report
Research Org:
The Ohio State Univ., Columbus, OH (United States)
Sponsoring Org:
USDOE Office of Nuclear Energy (NE). Nuclear Energy University Programs (NEUP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 22 GENERAL STUDIES OF NUCLEAR REACTORS; 36 MATERIALS SCIENCE; FAST NEUTRONS; GALLIUM NITRIDES; TEMPERATURE RANGE 0400-1000 K; NEUTRON BEAMS; LEAKAGE CURRENT; SENSORS; CHARGE COLLECTION; NEUTRON FLUENCE; EFFICIENCY; EVALUATION; IRRADIATION; PERFORMANCE; IN CORE INSTRUMENTS; NEUTRON DETECTORS; ELECTRIC CONDUCTIVITY; HEAT RESISTANT MATERIALS