A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report
- The Ohio State Univ., Columbus, OH (United States)
The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.
- Research Organization:
- The Ohio State Univ., Columbus, OH (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE). Nuclear Energy University Programs (NEUP)
- DOE Contract Number:
- AC07-05ID14517
- OSTI ID:
- 1169925
- Report Number(s):
- DOE/NEUP-11-3004; 11-3004; TRN: US1500398
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
22 GENERAL STUDIES OF NUCLEAR REACTORS
36 MATERIALS SCIENCE
FAST NEUTRONS
GALLIUM NITRIDES
TEMPERATURE RANGE 0400-1000 K
NEUTRON BEAMS
LEAKAGE CURRENT
SENSORS
CHARGE COLLECTION
NEUTRON FLUENCE
EFFICIENCY
EVALUATION
IRRADIATION
PERFORMANCE
IN CORE INSTRUMENTS
NEUTRON DETECTORS
ELECTRIC CONDUCTIVITY
HEAT RESISTANT MATERIALS