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Title: Cu Migration in Polycrystalline CdTe Solar Cells

An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1]
  1. Arizona State University
  2. First Solar
Publication Date:
OSTI Identifier:
1169664
Report Number(s):
DOE-ASU-0006344-5
DOE Contract Number:
EE0006344
Resource Type:
Conference
Resource Relation:
Conference: 10th International Conference and Exhibition on Device Packaging, Scottsdale, AZ, 10-13 March 2014
Research Org:
Arizona State University
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Contributing Orgs:
Arizona State University
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY