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Title: Enhanced electrical transparency by ultra-thin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [2] ;  [6]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Tokyo (Japan)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States);
  4. Stanford Univ., Stanford, CA (United States)
  5. The Univ. of Tokyo, Tokyo (Japan)
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
OSTI Identifier:
1169457
Report Number(s):
SLAC--PUB-16209
Journal ID: ISSN 1530-6984
DOE Contract Number:
AC02-76SF00515
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Letters; Journal Volume: 115; Journal Issue: 3
Publisher:
American Chemical Society
Research Org:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
interface dipole; polar discontinuity; Schottky junction; perovskite oxide; LaAlO3