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Title: Enhanced electrical transparency by ultra-thin LaAlO 3 insertion at oxide metal/semiconductor heterointerfaces

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO 3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO 3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [2] ;  [6]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Tokyo (Japan)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States);
  4. Stanford Univ., Stanford, CA (United States)
  5. The Univ. of Tokyo, Tokyo (Japan)
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
OSTI Identifier:
1169457
Report Number(s):
SLAC--PUB-16209
Journal ID: ISSN 1530-6984
DOE Contract Number:
AC02-76SF00515
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Letters; Journal Volume: 115; Journal Issue: 3
Publisher:
American Chemical Society
Research Org:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
interface dipole; polar discontinuity; Schottky junction; perovskite oxide; LaAlO3