Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
Journal Article
·
· Advanced Functional Materials
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC0001085
- OSTI ID:
- 1168093
- Journal Information:
- Advanced Functional Materials, Vol. 24; Related Information: RPEMSC partners with Columbia University (lead); Brookhaven National Laboratory; Purdue University
- Country of Publication:
- United States
- Language:
- English
Similar Records
Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures
Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.
Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors
Journal Article
·
Mon Jun 16 00:00:00 EDT 2014
· Advanced Functional Materials
·
OSTI ID:1168093
+7 more
Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.
Conference
·
Wed Jun 01 00:00:00 EDT 2022
·
OSTI ID:1168093
+6 more
Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors
Journal Article
·
Mon Feb 27 00:00:00 EST 2017
· Chemistry of Materials
·
OSTI ID:1168093
+11 more