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Title: Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.
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Conference: 40th IEEE Photovoltaic Specialist Conference, Denver, CO, 6/8/2014-6/13/2014
Research Org:
Arizona State University
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Contributing Orgs:
Arizona State University, Los Alamos National Laboratory
Country of Publication:
United States