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Title: Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.
Authors:
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Publication Date:
OSTI Identifier:
1166658
Report Number(s):
NREL/CP-5J00-63259
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: To be presented at WCPEC-6: 6th World Conference on Photovoltaic Energy Conversion, 23-27 November 2014, Kyoto, Japan
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO.
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE PASSIVATED CONTACTS; TUNNELING OXIDE; SILICON SOLAR CELL; N-TYPE OXIDES; N+DOPED POLYSILICON; BORON; Solar Energy - Photovoltaics