Effect of Surface Termination on the Electonic Properties of LaNiO₃ Films

Kumah, Divine P.; Malashevich, Andrei; Disa, Ankit S.; Arena, Dario A.; Walker, Fred J.; Ismail-Beigi, Sohrab; Ahn, Charles H.

doi:10.1103/PhysRevApplied.2.054004

Title: Effect of Surface Termination on the Electonic Properties of LaNiO₃ Films

Journal Article · Thu Nov 06 00:00:00 EST 2014 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.2.054004· OSTI ID:1165968

Kumah, Divine P. ^[1]; Malashevich, Andrei ^[1]; Disa, Ankit S. ^[1]; Arena, Dario A. ^[2]; Walker, Fred J. ^[1]; Ismail-Beigi, Sohrab ^[1]; Ahn, Charles H. ^[3]

Yale Univ., Center for Research on Interface Structures and Phenomena and Department of Applied Physics, New Haven, CT (United States)
Brookhaven National Laboratory, National Synchrotron Light Source, Upton, NY (United States)
Yale Univ., Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Department of Mechanical Engineering and Materials Science, New Haven, CT (United States)

The electronic and structural properties of thin LaNiO₃ films grown by using molecular beam epitaxy are studied as a function of the net ionic charge of the surface terminating layer. We demonstrate that electronic transport in nickelate heterostructures can be manipulated through changes in the surface termination due to a strong coupling of the surface electrostatic properties to the structural properties of the Ni—O bonds that govern electronic conduction. We observe experimentally and from first-principles theory an asymmetric response of the structural properties of the films to the sign of the surface charge, which results from a strong interplay between electrostatic and mechanical boundary conditions governing the system. The structural response results in ionic buckling in the near-surface NiO₂ planes for films terminated with negatively charged NiO₂ and bulklike NiO₂ planes for films terminated with positively charged LaO planes. The ability to modify transport properties by the deposition of a single atomic layer can be used as a guiding principle for nanoscale device fabrication.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-98CH10886; AC02–06CH11357; AC02–98CH10886

OSTI ID:: 1165968

Alternate ID(s):: OSTI ID: 1179980

Report Number(s):: BNL-107214-2014-JA; PRAHB2; R&D Project: LS001

Journal Information:: Physical Review Applied, Vol. 2, Issue 5; ISSN 2331-7019

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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