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Title: Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2SiS 4 and Fe 2GeS 4 Photovoltaics

Fe 2SiS 4 and Fe 2GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2SiS 4 or Fe 2GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2SiS 4 and Fe 2GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe 2SiS 4 and Fe 2GeS 4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2SiS 4 and Fe 2GeS 4 as solar absorber material is presented.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1946--4274
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Resource Relation:
Journal Name: MRS Proceedings; Journal Volume: 1670; Conference: 2014 MRS Spring Meeting, San Francisco, CA, April 21-25, 2014
Research Org:
Delaware State University
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Contributing Orgs:
Delaware State University, University of Delaware Institute of Energy Conversion
Country of Publication:
United States
14 SOLAR ENERGY; photovoltaic; thin film; grain size