skip to main content

Title: Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.
Authors:
;
Publication Date:
OSTI Identifier:
1165129
Report Number(s):
8,906,803
14/063,152
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 25
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING