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Title: p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1164344
Report Number(s):
8,895,848
12/191,407
DOE Contract Number:
FG02-06ER46320
Resource Type:
Patent
Research Org:
Northwestern University, Evanston, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE