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Title: Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Authors:
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  1. (FUTURE-PV)
  2. (
Publication Date:
OSTI Identifier:
1163377
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Cryst. Growth; Journal Volume: 407; Journal Issue: 12, 2014
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
DOE - BASIC ENERGY SCIENCESNSFFOREIGN
Country of Publication:
United States
Language:
ENGLISH