Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

Armstrong, Andrew; Crawford, Mary H.; Koleske, Daniel D.

doi:10.7567/APEX.7.032101

Title: Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

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Authors:: Armstrong, Andrew; Crawford, Mary H.; Koleske, Daniel D.

Publication Date:: Thu Mar 06 00:00:00 EST 2014

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1161289

DOE Contract Number:: AC04-94AL85000

Resource Type:: Journal Article

Journal Name:: Applied Physics Express

Additional Journal Information:: Journal Volume: 7; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting

Country of Publication:: United States

Language:: English

Subject:: solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats


                    Armstrong, Andrew, Crawford, Mary H., and Koleske, Daniel D. Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength.  United States: N. p., 2014. 
        Web.  doi:10.7567/APEX.7.032101.

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                    Armstrong, Andrew, Crawford, Mary H., & Koleske, Daniel D. Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength.  United States.  https://doi.org/10.7567/APEX.7.032101

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                    Armstrong, Andrew, Crawford, Mary H., and Koleske, Daniel D. 2014.  
        "Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength".  United States.  https://doi.org/10.7567/APEX.7.032101.

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@article{osti_1161289,

  title        = {Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength},

  author       = {Armstrong, Andrew and Crawford, Mary H. and Koleske, Daniel D.},

  abstractNote = {},

  doi          = {10.7567/APEX.7.032101},

  url          = {https://www.osti.gov/biblio/1161289},
  journal      = {Applied Physics Express},
number       = ,

  volume       = 7,

  place        = {United States},

  year         = {Thu Mar 06 00:00:00 EST 2014},

  month        = {Thu Mar 06 00:00:00 EST 2014}

}

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https://doi.org/10.7567/APEX.7.032101

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