DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE
Following our previous reports [ 1- 3], further isochronal annealing (2 hrs.) of the monocrystalline 6H-SiC and polycrystalline CVD 3C-SiC was performed at 1573 and 1673 K in Ar environment. SIMS data indicate that observable Mg diffusion in 6H-SiC starts and a more rapid diffusion in CVD 3C-SiC occurs at 1573 K. The implanted Mg atoms tend to diffuse deeper into the undamaged CVD 3C-SiC. The microstructure with Mg inclusions in the as-implanted SiC has been initially examined using high-resolution STEM. The presence of Mg in the TEM specimen has been confirmed based on EDS mapping. Additional monocrystalline 3C-SiC samples have been implanted at 673 K to ion fluence 3 times higher than the previous one. RBS/C analysis has been performed before and after thermal annealing at 1573 K for 12 hrs. Isothermal annealing at 1573 K is being carried out and Mg depth profiles being measured. Microstructures in both the as-implanted and annealed samples are also being examined using STEM.
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- Related Information: Fusion Materials Semiannual Progress Report for the Period Ending June 30, 2014, 56; DOE-ER-0313/56:103-108
- Oak Ridge National Laboratory, Oak Ridge, TN, United States(US).
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- Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
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- United States