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Title: Growth and characterization of Pt-protected Gd 5Si 4 thin films

Successful growth and characterization of thin films of giant magnetocaloric Gd 5(Si xGe 1-x) 4 were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd 5Si 4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350 nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd 5Si 4 orthorhombic structure along with Gd 5Si 3 secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345 K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342 K.
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Publication Date:
OSTI Identifier:
Report Number(s):
IS-J 8317
Journal ID: ISSN 0021-8979; JAPIAU
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17
American Institute of Physics (AIP)
Research Org:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
36 MATERIALS SCIENCE; Thin Films, Curie point, Pulsed laser deposition, Magnetic films, Magnetic phase transitions