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Title: Sintered silver joints via controlled topography of electronic packaging subcomponents

Patent ·
OSTI ID:1154940

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
8,822,036
Application Number:
13/787,366
OSTI ID:
1154940
Country of Publication:
United States
Language:
English

References (8)

Silver-coated electric composite materials patent July 1985
Lead frame for a semiconductor device patent January 1990
Silver-coated electrical components patent August 1992
Lead frame material and lead frame for semiconductor device patent April 1996
Method for producing a lead-free substrate patent March 2002
Board pieces, flexible wiring boards, and processes for manufacturing flexible wiring boards patent July 2003
Copper foil for high-density ultrafine printed wiring boad patent April 2006
Size-Scaling of Tensile Failure Stress in a Hot-Pressed Silicon Carbide: Size-Scaling of Tensile Failure Stress in Silicon Carbide journal April 2010

Cited By (3)