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Title: Off-axis silicon carbide substrates

A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1154656
Report Number(s):
8,823,014
12/966,753
DOE Contract Number:
AC02-76CH00016; AC02-98CH10886
Resource Type:
Patent
Research Org:
BNL (Brookhaven National Laboratory (BNL), Upton, NY (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE