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Title: A UVLO Circuit in SiC Compatible With Power MOSFET Integration

Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. We demonstrated the lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, in orderto have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data shows the circuit to be functional over a temperature range from -55°C to 300°C. This design of the circuit and test results is presented.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3]
  1. Univ. of Arkansas, Fayetteville, AR (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Arkansas Power Electronics International Inc., Fayetteville, AR (United States)
Publication Date:
OSTI Identifier:
1150887
DOE Contract Number:
AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Journal of Emerging and Selected Topics in Power Electronics; Journal Volume: 2; Journal Issue: 3
Publisher:
IEEE
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION Silicon carbide (SiC); MOSFET circuits; power MOSFET; temperature