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Title: A UVLO Circuit in SiC Compatible With Power MOSFET Integration

Abstract

Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. We demonstrated the lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, in orderto have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data shows the circuit to be functional over a temperature range from -55°C to 300°C. This design of the circuit and test results is presented.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3];  [3]
  1. Univ. of Arkansas, Fayetteville, AR (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Arkansas Power Electronics International Inc., Fayetteville, AR (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1150887
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
IEEE Journal of Emerging and Selected Topics in Power Electronics
Additional Journal Information:
Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 2168-6777
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; Silicon carbide (SiC); MOSFET circuits; power MOSFET; temperature

Citation Formats

Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, and Lostetter, Alexander B. A UVLO Circuit in SiC Compatible With Power MOSFET Integration. United States: N. p., 2014. Web. doi:10.1109/JESTPE.2014.2313119.
Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, & Lostetter, Alexander B. A UVLO Circuit in SiC Compatible With Power MOSFET Integration. United States. https://doi.org/10.1109/JESTPE.2014.2313119
Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, and Lostetter, Alexander B. 2014. "A UVLO Circuit in SiC Compatible With Power MOSFET Integration". United States. https://doi.org/10.1109/JESTPE.2014.2313119.
@article{osti_1150887,
title = {A UVLO Circuit in SiC Compatible With Power MOSFET Integration},
author = {Glover, Michael D. and Shepherd, Paul and Francis, A. Matt and Mudholkar, Mihir and Mantooth, Homer Alan and Ericson, Milton Nance and Frank, S. Shane and Britton, Charles L. and Marlino, Laura D. and McNutt, Ty R. and Barkley, Adam and Whitaker, Bret and Lostetter, Alexander B.},
abstractNote = {Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. We demonstrated the lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, in orderto have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data shows the circuit to be functional over a temperature range from -55°C to 300°C. This design of the circuit and test results is presented.},
doi = {10.1109/JESTPE.2014.2313119},
url = {https://www.osti.gov/biblio/1150887}, journal = {IEEE Journal of Emerging and Selected Topics in Power Electronics},
issn = {2168-6777},
number = 3,
volume = 2,
place = {United States},
year = {Fri Mar 21 00:00:00 EDT 2014},
month = {Fri Mar 21 00:00:00 EDT 2014}
}