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Title: 3D, Flash, Induced Current Readout for Silicon Sensors

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge
Authors:
 [1]
  1. Univ. of Hawaii, Honolulu, HI (United States)
Publication Date:
OSTI Identifier:
1150720
Report Number(s):
DOE-UH--0009961
DOE Contract Number:
SC0009961
Resource Type:
Technical Report
Research Org:
Univ. of Hawaii, Honolulu, HI (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
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