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Title: Final Technical Report

This project investigated the fundamental science of nanowire epitaxy using vapor-liquid-solid growth in the silicon-germanium material system. Ultrahigh vacuum chemical vapor deposition (UHV CVD) was the primary deposition method. Nanowires grown using UHV CVD were characterized ex situ using scanning electron microscopy and a variety of transmission electron microscopy techniques. In situ transmission electron microscopy was also employed to monitor growth in real time and was instrumental in elucidating growth mechanisms.
Authors:
Publication Date:
OSTI Identifier:
1149731
Report Number(s):
DOE-ASU-ER46345-F
DOE Contract Number:
FG02-06ER46345
Resource Type:
Technical Report
Research Org:
Arizona State University
Sponsoring Org:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE nanowire, epitaxy