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Title: Amber light-emitting diode comprising a group III-nitride nanowire active region

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1149612
Report Number(s):
8,785,905
13/743,438
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Research Org:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION