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Title: Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [3]
  1. University of Florida, Gainesville
  2. University of Florida
  3. ORNL
Publication Date:
OSTI Identifier:
1147723
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science & Technology B; Journal Volume: 32; Journal Issue: 5
Research Org:
Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
SC USDOE - Office of Science (SC)
Country of Publication:
United States
Language:
English