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Title: Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.
 [1] ;  [2] ;  [2] ;  [3] ;  [1]
  1. ORNL
  2. National Academy of Science of Ukraine, Kiev, Ukraine
  3. Ural Federal University, Russia
Publication Date:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nature Communications; Journal Volume: 5
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States