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Title: Low Temperature Ge on Si Epitaxy by High Density Plasma Chemical Vapor Deposition.

Abstract not provided.
Authors:
Publication Date:
OSTI Identifier:
1146535
Report Number(s):
SAND2014-4639C
520435
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Energy Materials Nanotechnology Summer Meeting held June 9-12, 2014 in Cancun, Mexico.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English