AlGaN composition dependence of the band offsets for epitaxial Gd2O3/ AlxGa1-xN (0%3Dx%3D0.67) heterostructures.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC04-94AL85000
- OSTI ID:
- 1145866
- Report Number(s):
- SAND2014-4096J; 518198
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 1; Related Information: Proposed for publication in Applied Physics Letters.; ISSN 0003--6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Band Offsets of La2O3 and Gd2O3 on AlxGa1-xN (0=x=0.67) as Measured by Photoelectron Spectroscopy.
AlGaN composition dependence of the band offsets for epitaxial Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) heterostructures
Valence band offsets of two rare earth oxides on AlxGa1-xN (0≤x≤0.67) as measured by photoelectron spectroscopy.
Conference
·
Thu May 01 00:00:00 EDT 2014
·
OSTI ID:1145866
+2 more
AlGaN composition dependence of the band offsets for epitaxial Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) heterostructures
Journal Article
·
Mon Jul 07 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1145866
+1 more
Valence band offsets of two rare earth oxides on AlxGa1-xN (0≤x≤0.67) as measured by photoelectron spectroscopy.
Conference
·
Sat Nov 01 00:00:00 EDT 2014
·
OSTI ID:1145866
+2 more