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Title: erformance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1145634
Report Number(s):
SAND2014-4075C
518027
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the High Temperature Electronics Conference 2014 held May 12-16, 2014 in Albuquerque, NM.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English