Wafer bonding of light emitting diode layers
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patent
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December 1994 |
Highly insulating monocrystalline gallium nitride thin films
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patent
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November 1997 |
Composite ceramic articles and method for making such articles
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patent
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October 1998 |
Articles coated with aluminum nitride by chemical vapor deposition
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patent
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June 2002 |
Growth method of gallium nitride film
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patent
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March 2003 |
Method for fabricating semiconductor light emitting device
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patent
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April 2003 |
Epitaxial film produced by sequential hydride vapor phase epitaxy
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patent
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January 2004 |
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon
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patent
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February 2004 |
Multi-chamber MOCVD growth apparatus for high performance/high throughput
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patent
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May 2008 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
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patent
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September 2009 |
Methods of manufacturing light emitting diodes including barrier layers/sublayers
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patent
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November 2009 |
Method of manufacturing vertical light emitting diode
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patent
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November 2010 |
Compound semiconductor device using SiC substrate and its manufacture
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patent
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January 2011 |
Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
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patent
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March 2011 |
Method for making crystalline composition
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patent
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May 2011 |
Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
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patent
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May 2011 |
Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system
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patent
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December 2011 |
Group III nitride compound semiconductor device and method of producing the same
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patent-application
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June 2004 |
Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
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patent-application
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January 2006 |
Substrate for nitride semiconductor growth
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patent-application
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March 2006 |
Method for manufacturing gallium nitride-based semiconductor device
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patent-application
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November 2006 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
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patent-application
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November 2007 |
Method and materials for growing III-nitride semiconductor compounds containing aluminum
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patent-application
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April 2008 |
Method for Depositing Group III/V Compounds
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patent-application
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June 2009 |
Compound Semiconductor Device Using SiC Substrate and Its Manufacture
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patent-application
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July 2009 |
Method of Manufacturing Nitride Semiconductor and Nitride Semiconductor Element
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patent-application
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October 2009 |
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
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patent-application
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January 2010 |
Method for determination of bridged taps on a transmission line
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patent-application
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May 2010 |
Substrate Pretreatment for Subsequent High Temperature Group III Depositions
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patent-application
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October 2010 |
Method of Forming In-Suite Pre-GaN Deposition Layer in HVPE
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patent-application
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November 2010 |
Inclusion-Free Uniform Semi-Insulating Group III Nitride Substrates and Methods for Making Same
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patent-application
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February 2011 |
Growth of Bulk GaN and AlN: Progress and Challenges
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journal
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July 2010 |
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
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journal
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December 2004 |
Epitaxial growth and electrical properties of GaN-AlN solid solutions
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journal
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January 1977 |
Growth and properties of AlxGa1–xN epitaxial layers
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journal
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October 1978 |
Aluminum nitride substrate growth by halide vapor transport epitaxy
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journal
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March 2003 |
Modeling of gas phase and surface reactions in an aluminum nitride growth system
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journal
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July 2006 |
Epitaxial growth of aluminum nitride
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journal
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October 1967 |
The Preparation and Properties of Aluminum Nitride Films
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journal
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January 1975 |
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD
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journal
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June 2009 |
Chemical vapour deposition of polycrystalline AlN films from AlCl3–NH3 mixtures.
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journal
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March 2002 |
Cluster Size Determination in the Chemical Vapor Deposition of Aluminum Nitride
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journal
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August 1994 |
MOVPE-like HVPE of AlN using solid aluminum trichloride source
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journal
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January 2007 |
Growth of thick AlN layers by hydride vapor-phase epitaxy
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journal
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July 2005 |
First AlGaN Free-Standing Wafers
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journal
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January 2003 |
Gas-phase synthesis of AlN powders from AlCl3-NH3-N2
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journal
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January 1993 |
Composition, Kinetics, and Mechanism of Growth of Chemical Vapor-Deposited Aluminum Nitride Films
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journal
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January 1982 |
Thermodynamics and Kinetics of Chemical Vapor Deposition of Aluminum Nitride Films
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journal
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January 1980 |
Modeling analysis of AlN and AlGaN HVPE
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journal
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May 2009 |
The Chemical Vapor Deposition of Aluminum Nitride: Unusual Cluster Formation in the Gas Phase
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journal
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June 1997 |
Effect of process parameters on synthesis of aluminum nitride powder prepared by chemical vapor deposition
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journal
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January 2001 |
Epitaxially grown AlN and its optical band gap
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journal
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January 1973 |
Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure
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journal
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July 2004 |
THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
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journal
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November 1969 |
AlN substrates: fabrication via vapor phase growth and characterization
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journal
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November 2003 |
Herstellung der Nitride von Bor, Aluminium, Gallium und Indium nach dem Aufwachsverfahren
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journal
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January 1959 |