skip to main content

Title: Method of forming contacts for a back-contact solar cell

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Authors:
Publication Date:
OSTI Identifier:
1143683
Report Number(s):
8,778,787
13/930,078
DOE Contract Number:
FC36-07G017043
Resource Type:
Patent
Research Org:
SunPower Corporation, San Jose, CA (USA)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English