skip to main content

Title: Sensitivity Analysis of a Technique for the Extraction of Interface Trap Density in SiC MOSFETs from Subthreshold Characteristics.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1141974
Report Number(s):
SAND2014-2777C
507165
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2014 IEEE IRPS held June 1-5, 2014 in Waikoloa, HI.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English