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Title: Sensitivity Analysis of a New Technique for Trapped Charge Extraction in SiC MOSFETs from Subthreshold Characteristics.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1141234
Report Number(s):
SAND2014-2219C
505423
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the IEEE International Reliability Physics Symposium held June 1-5, 2014 in Waikoloa, HI.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English