Wafer-Level Step-Stressing of InGaP/GaAs HBTs.

Journal Article · Sat Feb 01 00:00:00 EST 2014 · ECS Transactions

DOI:https://doi.org/10.1149/06104.0009ecst· OSTI ID:1141216

Baca, Albert G.; Kotobi, Joshua Ali; Fortune, Torben Ray; Gorenz, Alan; Klem, John Frederick; Briggs, Ronald D.; Clevenger, Jascinda; Patrizi, Gary A.

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: DE-AC04-94AL85000
• OSTI ID: 1141216
• Report Number(s): SAND2014-1467J; 504888
• Journal Information: ECS Transactions, Vol. 61, Issue 4; Related Information: Proposed for publication in ECS Transactions.; ISSN 1938--6737
• Country of Publication: United States
• Language: English