Performance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.
Abstract not provided.
- Publication Date:
- OSTI Identifier:
- Report Number(s):
Journal ID: ISSN 2380--4491; 505424
- DOE Contract Number:
- Resource Type:
- Resource Relation:
- Journal Volume: 2014; Journal Issue: HITEC; Conference: Proposed for presentation at the High Temperature Electronics Conference 2014 held May 13-15, 2014 in Albuquerque, NM.
- Research Org:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org:
- USDOE National Nuclear Security Administration (NNSA)
- Country of Publication:
- United States
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