Performance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1141024
- Report Number(s):
- SAND2014-2220C; 505424
- Resource Relation:
- Journal Volume: 2014; Journal Issue: HITEC; Conference: Proposed for presentation at the High Temperature Electronics Conference 2014 held May 13-15, 2014 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
Similar Records
erformance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures.
Conference
·
Thu May 01 00:00:00 EDT 2014
·
OSTI ID:1141024
+2 more
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures.
Conference
·
Sat Jun 01 00:00:00 EDT 2013
·
OSTI ID:1141024
+3 more
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures.
Conference
·
Sat Jun 01 00:00:00 EDT 2013
·
OSTI ID:1141024
+3 more