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Title: Scientific/Technical Report

Measurements of the thermoelectric power of the dilute, strongly-interacting two-dimensional electron system in high-mobility, low-disorder silicon MOSFETs were obtained at low temperatures down to 0.2 K. With decreasing density n_s, the thermopower was found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density n_t. The critical behavior of the thermopower observed in our experiments provides clear evidence for an interaction-induced quantum phase transition to a new phase at low density in a strongly interacting 2D electron system, thereby settling a 20-year debate.
Authors:
Publication Date:
OSTI Identifier:
1140147
Report Number(s):
DOE-CCNY/CUNY-ER46284
DOE Contract Number:
FG02-06ER46284
Resource Type:
Technical Report
Research Org:
RF-CUNY
Sponsoring Org:
USDOE; USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Thermoelectric power; metal-insulator transition; two dimensional electron systems; quantum phase transition; electron-electron interactions; high-mobiility; silicon metal-oxide-semiconductor-field-effect-trasistors (MOSFETs).