Inverted, Organic WORM Device Based on PEDOT:PSS with Very Low Turn-On Voltage
- Univ. of Denver, CO (United States)
- Univ. of Colorado, Boulder, CO (United States)
- Purdue Univ., West Lafayette, IN (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
An organic Write-Once-Read-Many (WORM) device based on poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) as the active layer was fabricated with an inverted architecture. Insertion of an ultrathin layer of poly(methylmethacrylate) (PMMA) between the bottom electrode and the PEDOT:PSS resulted in a systematic and substantial decrease in turn-on voltage, from 7.0 V to less than 1.0 V. An optimal thickness of the PMMA layer was found to yield the lowest consistent turn-on voltage of ~0.8 V, with 0.5 V being the lowest value of all fabricated devices. The switching mechanism was attributed to filamentary doping of the PEDOT:PSS. Insertion of the PMMA acted to protect the underlying ZnO from being etched by the acidic PEDOT:PSS as well as to improve its wetting properties. Moreover, devices were demonstrated on both ITO and aluminum bottom electrodes, with aluminum yielding the highest ON/OFF ratios in the study. Owing to their inverted architecture, the devices demonstrated good stability, and the retention time of the ON-state was determined to be greater than twenty months while stored in air for devices with ITO bottom electrodes. Blade-coating was demonstrated as a viable processing technique for applications requiring rapid or large-area manufacturing in addition to deposition via spin-coating.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1136223
- Journal Information:
- Organic Electronics, Vol. 15, Issue 8, August 2014; ISSN 1566-1199
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
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