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Title: Ultra-thin ohmic contacts for p-type nitride light emitting devices

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1135722
Report Number(s):
8,759,868
13/271,865
DOE Contract Number:
FC26-00NT40985
Resource Type:
Patent
Research Org:
NETL (National Energy Technology Laboratory, Pittsburgh, PA, and Morgantown, WV (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING