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Title: Method to grow group III-nitrides on copper using passivation layers

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
Authors:
; ;
Publication Date:
OSTI Identifier:
1133649
Report Number(s):
8,741,748
13/836,594
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE