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Title: Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1133446
Report Number(s):
8,734,674
13/457,070
DOE Contract Number:
AC02-06CH11357
Resource Type:
Patent
Research Org:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; 36 MATERIALS SCIENCE