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Title: Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
Authors:
Publication Date:
OSTI Identifier:
1132783
Report Number(s):
8,735,204
13/744,152
DOE Contract Number:
AC36-08GO28308
Resource Type:
Patent
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE