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Title: Two-color infrared detector

Abstract

A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1131017
Patent Number(s):
8,723,161
Application Number:
13/352,098
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jan 17
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Klem, John F, and Kim, Jin K. Two-color infrared detector. United States: N. p., 2014. Web.
Klem, John F, & Kim, Jin K. Two-color infrared detector. United States.
Klem, John F, and Kim, Jin K. 2014. "Two-color infrared detector". United States. https://www.osti.gov/servlets/purl/1131017.
@article{osti_1131017,
title = {Two-color infrared detector},
author = {Klem, John F and Kim, Jin K},
abstractNote = {A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.},
doi = {},
url = {https://www.osti.gov/biblio/1131017}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 13 00:00:00 EDT 2014},
month = {Tue May 13 00:00:00 EDT 2014}
}

Works referenced in this record:

Single-Band and Dual-Band Infrared Detectors
patent-application, June 2013


Heterojunction band offsets and effective masses in III-V quaternary alloys
journal, January 1991


nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006


nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices
conference, June 2008


Mesa-isolated InGaAs photodetectors with low dark current
journal, July 2009


Works referencing / citing this record: