skip to main content

Title: Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.
Authors:
;
Publication Date:
OSTI Identifier:
1130983
Report Number(s):
DOE-UH-00881
DOE Contract Number:
SC0000881
Resource Type:
Technical Report
Research Org:
UNIVERSITY OF HOUSTON
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 77 NANOSCIENCE AND NANOTECHNOLOGY